(China (Mainland))
Product Summary
The SDIN2C2-4G is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM broadcast transmitters. This device utilizes diffused emitter resistors to achieve infinite VSWR at rated operating conditions.
Parametrics
SDIN2C2-4G absolute maximum ratings: (1)VCBO, Collector-Base Voltage: 60 V; (2)VCEO, Collector-Emitter Voltage: 25 V; (3)VCES, Collector-Emitter Voltage: 60 V; (4)VEBO, Emitter-Base Voltage: 4.0 V; (5)IC, Device Current: 16 A; (6)PDISS, Power Dissipation: 230 W; (7)TJ, Junction Temperature: +200℃; (8)TSTG, Storage Temperature: -65 to +150℃.
Features
SDIN2C2-4G features: (1)108 MHz; (2)28 VOLTS; (3)Efficiency 75%; (4)Common emitter; (5)Gold metallization POUT = 150 W MIN; (6)WITH 9.2 dB GAIN.
Diagrams
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 SDIN2B2-2G |
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IC INAND FLASH 2GB 169FBGA |
Data Sheet |
Negotiable |
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SDIN2B2-2G-Q |
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IC INAND FLASH 2GB 169FBGA |
Data Sheet |
Negotiable |
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SDIN2B2-2G-T |
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IC INAND FLASH 2GB 169FBGA |
Data Sheet |
Negotiable |
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SDIN2B2-4G |
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IC INAND FLASH 4GB 169FBGA |
Data Sheet |
Negotiable |
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SDIN2B2-4G-Q |
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IC INAND FLASH 4GB 169FBGA |
Data Sheet |
Negotiable |
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SDIN2B2-4G-T |
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IC INAND FLASH 4GB 169FBGA |
Data Sheet |
Negotiable |
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