(China (Mainland))
Product Summary
The S29GL256N11TF102 is 3.0V single power flash memory manufactured using 110 nmMirrorBit technology. The S29GL256N11TF102 is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL256N11TF102 has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The S29GL256N11TF102 can be programmed either in the host system or in standard EPROM programmers.
Parametrics
S29GL256N11TF102 absolute maximum ratings: (1) Storage Temperature, Plastic Packages: -65°C to +150°C; (2) Ambient Temperature with Power Applied: -65°C to +125°C; (3) Voltage with Respect to Ground VCC : -0.5V to +4.0V, VIO: -0.5V to +4.0V, V9,OE# and ACC: -0.5V to +12.5V, All other pins: -0.5V to Vcc +0.5V; (4) Output Short Circuit Current: 200mA.
Features
S29GL256N11TF102 features: (1) Compatibility with JEDEC standards; (2) 100,000 erase cycles per sector typical; (3) 20-year data retention typical; (4) aAdvanced Sector Protection; (5) aCFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices; (6) Single power supply operation; (7) Flexible sector architecture; (8) Low power consumption (typical values at 3.0 V, 5 MHz) .
Diagrams
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Other |
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Negotiable |
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S29GL01GP |
Other |
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Negotiable |
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S29GL01GP11FAIR10 |
Spansion |
Flash IC 1GIG 3.0V FLSHMEM |
Data Sheet |
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S29GL01GP11FAIR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns |
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S29GL01GP11FFCR10 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
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S29GL01GP11FFCR20 |
Spansion |
Flash 1GB 3.0-3.6V 110ns PBF |
Data Sheet |
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