(China (Mainland))
Product Summary
The MT29F32G08CBABA is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 134,217,728-bit banks is organized as 8,192 rows by 4,096 columns by 4 bits. Each of the x8’s 134,217,728-bit banks is organized as 8,192 rows by 2,048 columns by 8 bits.
Parametrics
MT29F32G08CBABA absolute maximum ratings: (1)Voltage on VDD, VDDQ Supply Relative to VSS: -1V to +4.6V; (2)Voltage on Inputs, NC or I/O Pins Relative to VSS: -1V to +4.6V; (3)Operating Temperature, TA (Commercial): 0°C to +70°C; (4)Storage Temperature (plastic): -55°C to +150°C; (5)Power Dissipation: 1W.
Features
MT29F32G08CBABA features: (1)PC100- and PC133-compliant; (2)Fully synchronous; all signals registered on positive edge of system clock; (3)Internal pipelined operation; column address can be changed every clock cycle; (4)Internal banks for hiding row access/precharge; (5)Programmable burst lengths: 1, 2, 4, 8, or full page.
Diagrams
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 MT29C1G12MAACAEAKC-6 IT |
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IC FLASH NAND 1GB 107VFBGA |
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MT29C1G12MAACAEAMD-6 IT |
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IC FLASH NAND 1GB 130VFBGA |
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MT29C1G12MAACAEAML-6 IT |
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IC FLASH NAND 1GB 153VFBGA |
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MT29C1G12MAACAFAKD-6 IT |
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IC FLASH NAND 1GB 137TFBGA |
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MT29C1G12MAACAFAMD-6 IT |
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IC FLASH NAND 1GB 130VFBGA |
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MT29C1G12MAACAFAML-6 IT |
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IC FLASH NAND 1GB 153VFBGA |
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