(China (Mainland))
Product Summary
The M29W400DB is a 4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W400DB is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
Parametrics
M29W400DB absolute maximum ratings: (1)Temperature under bias: -50 to 125 ℃; (2)Storage temperature: -65 to 150 ℃; (3)Input or output voltage: -0.6 to VCC+0.6 V; (4)Supply voltage: -0.6 to 4 V; (5)Identification voltage: -0.6 to 13.5 V.
Features
M29W400DB features: (1)Supply voltage: VCC = 2.7 V to 3.6 V for Program, Erase and Read; (2)Access time: 45, 55, 70 ns; (3)Programming time: 10 μs per byte/word typical; (4)11 memory blocks: 1 boot block (top or bottom location), 2 parameter and 8 main blocks; (5)Program/Erase controller: Embedded byte/word program algorithms; (6)Erase Suspend and Resume modes: Read and Program another block during Erase Suspend.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 M29W400DB45N6E |
STMicroelectronics |
Flash 4 Mbit (3 V) |
Data Sheet |
Negotiable |
|
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|
M29W400DB45ZE6E |
STMicroelectronics |
Flash 4 MBIT 3V SUPPLY |
Data Sheet |
Negotiable |
|
||||
|
M29W400DB55N6E |
STMicroelectronics |
Flash STD FLASH |
Data Sheet |
Negotiable |
|
||||
|
M29W400DB55N1 |
STMicroelectronics |
Flash 512Kx8 or 256Kx16 55 |
Data Sheet |
Negotiable |
|
||||
|
M29W400DB55N6 |
STMicroelectronics |
Flash 512Kx8 or 256Kx16 55 |
Data Sheet |
Negotiable |
|
||||
 |
M29W400DB55N3T |
|
IC FLASH 4MBIT 55NS 48TSOP |
Data Sheet |
Negotiable |
|
||||
|
M29W400DB55ZE6F |
STMicroelectronics |
Flash 4 Mbit (512 ) 3 V |
Data Sheet |
Negotiable |
|
||||
|
M29W400DB55ZE6E |
STMicroelectronics |
Flash 4 MBIT 3V SUPPLY |
Data Sheet |
Negotiable |
|
||||
