Product Summary

The K4T1G164QF-BCE7 is a 512Mb G-die DDR2 SDRAM. It is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. The K4T1G164QF-BCE7 achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination. The K4T1G164QF-BCE7 operates with a single 1.8V ± 0.1V power supply and 1.8V ± 0.1V VDDQ. It is available in 60ball FBGAs(x8) and in 84ball FBGAs(x16).

Parametrics

K4T1G164QF-BCE7 absolute maximum ratings: (1)VDD Voltage on VDD pin relative to VSS: - 1.0 V to 2.3 V; (2)VDDQ Voltage on VDDQ pin relative to VSS: - 0.5 V to 2.3 V; (3)VDDL Voltage on VDDL pin relative to VSS: - 0.5 V to 2.3 V; (4)VIN, VOUT Voltage on any pin relative to VSS: - 0.5 V to 2.3 V; (5)TSTG Storage Temperature: -55 to +100 ℃.

Features

K4T1G164QF-BCE7 features: (1)JEDEC standard 1.8V±0.1V Power Supply; (2)VDDQ = 1.8V±0.1V; (3)200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin; (4)4 Banks; (5)Posted CAS; (6)Programmable CAS Latency: 3, 4, 5, 6; (7)Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5; (8)Write Latency(WL) = Read Latency(RL) -1; (9)Burst Length: 4 , 8(Interleave/nibble sequential); (10)Programmable Sequential / Interleave Burst Mode; (11)Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature); (12)Off-Chip Driver(OCD) Impedance Adjustment; (13)On Die Termination.

Diagrams

K4T1G164QF-BCE7 block diagram

K4T1G044QA
K4T1G044QA

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Data Sheet

Negotiable 
K4T1G044QM-ZCCC
K4T1G044QM-ZCCC

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Data Sheet

Negotiable 
K4T1G044QM-ZCD5
K4T1G044QM-ZCD5

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Data Sheet

Negotiable