Product Summary

The IS61WV25616BLL-10TLI is a high-speed, 4194304-bit static RAM organized as 262144 words by 16bits. The IS61WV25616BLL-10TLI is fabricated using ISSI’s hgih-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH(deselected), the IS61WV25616BLL-10TLI assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Parametrics

IS61WV25616BLL-10TLI absolute maximum ratings: (1)terminal voltage with respect to GND:-0.5V to VDD+0.5V; (2)VDD relates to GND:-0.3V to 4.0V; (3)storage temperature:-65 to +150℃; (4)power dissipation:1.0W.

Features

IS61WV25616BLL-10TLI features: (1)high-speed access time:8, 10, 20ns; (2)low active power:85mW; (3)low standby power:7mW CMOS standby; (4)single power supply:2.4 to 3.6V; (5)fully static operation: no clock or refresh required; (6)three state outputs; (7)data control for uppear and low bytes; (8)industrial and automotive temperature support; (9)lead-free available.

Diagrams

IS61WV25616BLL-10TLI block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IS61WV25616BLL-10TLI
IS61WV25616BLL-10TLI

ISSI

SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v

Data Sheet

0-1: $2.60
1-25: $2.46
25-100: $2.26
100-500: $2.18
IS61WV25616BLL-10TLI-TR
IS61WV25616BLL-10TLI-TR

ISSI

SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v

Data Sheet

0-1000: $2.11
1000-2000: $2.09